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VSK.F200..P Series
Vishay High Power Products
Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 200 A
FEATURES
* Fast turn-off thyristor * Fast recovery diode * High surge capability * Electrically isolated baseplate * 3500 VRMS isolating voltage * Industrial standard package * Lead (Pb)-free * Designed and qualified for industrial level
MAGN-A-PAKTM
RoHS
COMPLIANT
DESCRIPTION PRODUCT SUMMARY
IT(AV) 200 A
This series of MAGN-A-PAKTM modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL IT(AV) IT(RMS) ITSM I2 t I2t tq trr VDRM/VRRM TJ Range 50 Hz 60 Hz 50 Hz 60 Hz CHARACTERISTICS VALUES 200 TC 85 444 7600 8000 290 265 2900 20/25 2 up to 1200 - 40 to 125 kA2s kA2s s V C A UNITS A C
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 08 12 VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 800 1200 IRRM/IDRM AT TJ = 125 C mA 50
VSK.F200-
Document Number: 94422 Revision: 03-Jun-08
For technical questions, contact: ind-modules@vishay.com
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VSK.F200..P Series
Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAKTM Power Modules), 200 A
CURRENT CARRYING CAPABILITY
ITM 180 el 180 el ITM 100 s ITM
FREQUENCY
UNITS
50 Hz 400 Hz 2500 Hz 5000 Hz 10 000 Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt Case temperature Equivalent values for RC circuit
380 460 310 250 180 50
560 690 450 360 280 50
630 710 530 410 300 50
850 1060 760 560 410 50
2460 1570 630 410 50
3180 2080 860 560 50 V A/s C /F A
80 % VDRM 50 85 10/0.47 50 60 85
80 % VDRM 60 10/0.47 85
80 % VDRM 60 10/0.47
ON-STATE CONDUCTION
PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive on-state, surge current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave As AC switch t = 10 ms ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value or threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Maximum holding current Maximum latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sinusoidal half wave, initial TJ = 125 C VALUES 200 85 444 7600 8000 6400 6700 290 265 205 187 2900 1.18 1.25 0.74 0.70 1.73 6000 1000 V mA m kA2s V kA2s A UNITS A C
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum Ipk = 600 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , Ig = 1A
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94422 Revision: 03-Jun-08
VSK.F200..P Series
Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 200 A
SWITCHING
PARAMETER Maximum non-repetitive rate of rise Maximum recovery time Maximum turn-off time SYMBOL dI/dt trr tq TEST CONDITIONS Gate drive 20 V, 20 , tr 1 ms, VD = 80 % VDRM, TJ = 25 C ITM = 350 A, dI/dt = - 25 A/s, VR = 50 V, TJ = 25 C ITM = 750 A; TJ = TJ maximum; dI/dt = - 25 A/s; VR = 50 V; dV/dt = 400 V/s linear to 80 % VDRM 20 VALUES K 800 2 25 s J UNITS A/s
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BLOCKING
PARAMETER Maximum critical rate of rise of off-state voltage RMS insulation voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt VINS IRRM, IDRM TEST CONDITIONS TJ = 125 C, exponential to 67 % VDRM 50 Hz, circuit to base, TJ = 25 C, t = 1 s TJ = 125 C, rated VDRM/VRRM applied VALUES 1000 3000 50 UNITS V/s V mA
TRIGGERING
PARAMETER Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Maximum DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM -VGT IGT VGT IGD VGD TEST CONDITIONS f = 50 Hz, d% = 50 TJ = 125 C, f = 50 Hz, d% = 50 TJ = 125 C, tp 5 ms TJ = 25 C, Vak 12 V, Ra = 6 VALUES 60 10 10 5 200 3 20 0.25 UNITS W A V mA V mA V
TJ = 125 C, rated VDRM applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction operating temperature range Storage temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink per module MAP to heatsink Mounting torque 10 % busbar to MAP Approximate weight SYMBOL TJ TStg RthJC RthC-hs DC operation Mounting surface flat, smooth and greased A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is not recommended, busbar should be used and restrained during tightening. Threads must be lubricated with a compound. TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.125 K/W 0.025 UNITS C
4 to 6 (35 to 53) 500 17.8
N*m (lbf * in) g oz.
Document Number: 94422 Revision: 03-Jun-08
For technical questions, contact: ind-modules@vishay.com
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VSK.F200..P Series
Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAKTM Power Modules), 200 A
RthJC CONDUCTION
CONDUCTIONS ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION 0.009 0.10 0.014 0.020 0.32 RECTANGULAR CONDUCTION 0.006 0.011 0.015 0.020 0.033 K/W UNITS
Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Maximum Allowable Case T emperature (C)
120 110 100 90
VSK.F 200.. S eries R thJC (DC) = 0.125 K/ W
Maximum Average On-state Power L s (W) os
130
350 300 250 200 RMS Limit 150 100 50 0 0 40 80 120 160 200 Average On-state Current (A)
Conduc tion Angle
180 120 90 60 30
Conduc tion Angle
30 80 70 60 0 40 80 120 160 200 240 Average On-state Current (A) 60 90 120 180
VSK.F 200.. S eries Per Junction TJ= 125C
Fig. 1 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable Cas T e emperature (C)
120 110 100 90
VSK.F 200.. S eries R thJC (DC) = 0.125 K/ W
Maximum Average On-s tate Power L s (W) os
130
500 450 400 350 300 250 200 RMS Limit 150 100 50 0 0 50 100 150 200 250 300 350 Average On-state Current (A)
Conduction Period
Conduction Period
DC 180 120 90 60 30
30 80 70 60 0 50 100 150 200 250 300 350 Average On-state Current (A) 60 90 120 180 DC
VSK.F 200.. S eries Per Junction TJ = 125C
Fig. 2 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
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Document Number: 94422 Revision: 03-Jun-08
VSK.F200..P Series
Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 200 A
Peak Half S ine Wave On-s tate Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial TJ= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
(K/ W)
Vishay High Power Products
7000
1 S teady S tate Value: R thJC = 0.125 K/ W (DC Operation) 0.1
5000
T ransient T hermal Impedance Z
6000
thJC
0.01
4000 VSK.F200.. S eries Per Junction 3000 1 10 100
Numb er Of Equa l Amplitude Half Cyc le Current Pulses (N)
VSK.F 200.. S eries Per Junc tion 0.001 0.001 0.01 0.1 1 10 100
S quare Wave Puls Duration (s) e
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance ZthJC Characteristics
Peak Half S Wave On-state Current (A) ine
8000
7000
6000
Ma ximum Non Rep etitive S urge Current Versus Pulse T rain Duration. Control Of Conduction May Not Be Maintained. Initial T = 125C J No Voltage R eap plied R ated VRRMR eapplied
Maximum R evers R e ecovery Charge - Qrr (C)
320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 VSK.F200.. S eries TJ = 125C 60 70 80 90 100
IT = 1000 A M 500 A 300 A 200 A 100 A
5000
4000 VSK.F 200.. S eries Per Junction 3000 0.01 0.1
Pulse T rain Duration (s)
1
R ate Of Fall Of Forward Current - di/ dt (A/ s )
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovery Charge Characteristics
Maximum R everse R overy Current - Irr (A) ec
10000 Instantaneous On-state Current (A)
180
I T = 1000A M 500A 300A 200A 100A
150
120
1000 TJ= 25C TJ= 125C VSK.F200.. Series Per Junc tion 100 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V)
90
60
VSK.F200.. S eries TJ = 125C 20 30 40 50 60 70 80 90 100
30 10
R ate Of Fall Of Forward Current - di/ dt (A/ s )
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Document Number: 94422 Revision: 03-Jun-08
For technical questions, contact: ind-modules@vishay.com
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VSK.F200..P Series
Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAKTM Power Modules), 200 A
1E4
Peak On-stata Current (A)
50 Hz 150 400
50 Hz 150 400 1000 2500 5000
1E3
2500 5000
1000
1E2
VSK.F200.. S eries S inusoidal pulse TC = 85C S nub ber c irc uit R s= 10 ohms C s = 0.47 F V D = 80% V DRM
tp 1E1 1E1
tp 1E1 1E1
VSK.F200.. S eries S inusoidal pulse T C = 60C
S nubber circuit R s= 10 ohms C s = 0.47 F V D = 80% V DRM
1E 2
1E3
1E 4 4 1E
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
1E4
VSK.F200.. S eries T rapezoid a l pulse TC= 85C d i/d t 50A/ s
Peak On-s tate Current (A)
tp
tp
VSK.F200.. Series T rapezoidal pulse TC = 85C di/ dt 100A/ s
50 Hz 150 150 400 1000 2500 400 1000 2500
5000
50 Hz
1E3
S nubber circ uit R s= 10 ohms C s = 0.47 F V D = 80% V DRM
5000
S nubber circ uit R s= 10 ohms C s = 0.47 F V D = 80% V DRM
1E2 1E1
1E2
1E 3
1E4 1E 4
1E1 E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
1E4
Peak On-s tate Current (A)
50 Hz 50 Hz 150 400 400 1000 2500 5000 150
1E3
2500 5000
1000
tp 1E2 1E1
VSK.F200.. S eries T rapezoidal pulse TC= 60C di/ dt 50A/ s
S nubber circ uit R s= 10 ohms C s = 0.47 F V D = 80% V DRM
tp 1E1 E1
VSK.F200.. S eries T rapezoidal pulse TC= 60C di/ dt 100A/ s
S nubber circ uit R s= 10 ohms C s = 0.47 F V D = 80% V DRM
1E2
1E3
1E4 1E4
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
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Document Number: 94422 Revision: 03-Jun-08
VSK.F200..P Series
Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAKTM Power Modules), 200 A
1E4
10 joules per pulse
10 joules per pulse 5 2.5 1 0.5 0.25 0.1 0.05
Vishay High Power Products
Peak On-state Current (A)
2.5 1
5
1E3
0.05
0.5 0.25 0.1
1E2 tp
VSK.F200.. S eries S inusoidal pulse
VSK.F200.. S eries T rapezoidal pulse d i/ dt 50A/ s
tp
1E1 1E 1
1E2
1E3
1E4 1E4
E1 1 1E
1E2
1E3
1E 4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/ dt : 10V, 10ohms b) Recommended load line for <=30% rated di/ dt : 10V, 20ohms (a) (b)
j=25 C T T j=125 C Tj=-40 C
(1) PGM = 8W, tp = 25ms (2) PGM = 20W, tp = 1ms (3) PGM = 40W, tp = 5ms (4) PGM = 80W, tp = 2.5ms
10
1 VGD IGD 0.1 0.01 0.1
(1)
(2)
(3)
(4)
VSK.F200.. Series 1
Frequenc y Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
1 1 2 3 4 5 6 7 8 -
T
2
F
3
200
4
-
12
5
H
6
K
7
P
8
Module type Circuit configuration Fast SCR Current rating: IT(AV) x 10 rounded Voltage code x 100 = VRRM (see Voltage Ratings table) dV/dt code: H 400 V/s tq code: K 20 s J 25 s Lead (Pb)-free
Note * To order the optional hardware go to www.vishay.com/doc?95172 Document Number: 94422 Revision: 03-Jun-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7
VSK.F200..P Series
Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAKTM Power Modules), 200 A
CIRCUIT CONFIGURATION
VSKTF...
~ ~
VSKHF...
~ ~
VSKLF...
~ ~
VSKUF...
+ +
VSKVF...
-
VSKKF...
+ +
VSKNF...
-
+
+
+
+
+
+
-
-
+
+
-
-
+
+
-
K1G1 G2 K2
K1G1
-
-
-
-
K1G1 G2 K2
+
+ K1G1 G2 K2
-
G2 K2
+
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95086
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Document Number: 94422 Revision: 03-Jun-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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